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NP40N055ELE, NP40N055KLE, NP40N055CLE, NP40N055DLE, NP40N055MLE, NP40N055NLE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE
vs. CHANNEL TEMPERATURE
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
50
40
30
Pulsed
V GS = 4.5 V
5.0 V
10 V
1000
100
10
Pulsed
V GS = 10 V
0V
20
100
1
0
I D = 20 A
0.1
? 50
0
50
100
150
0
0.4
0.8
1.2
1.6
2.0
T ch - Channel Temperature - ° C
Figure14. CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
V F(S-D) - Source to Drain Voltage - V
Figure15. SWITCHING CHARACTERISTICS
10000
V GS = 0 V
f = 1 MHz
1000
1000
C iss
100
t f
t d(off)
C oss
t d(on)
100
C rss
10
t r
V DD = 28 V
R G = 1 Ω
10
0.1
1
10
100
V GS = 10 V
1
0.1
1
10
100
V DS - Drain to Source Voltage - V
Figure16. REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
I D - Drain Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
di/dt = 100 A/ μ s
V GS = 0 V
80
60
16
14
12
100
40
V DD = 44 V
28 V
11 V
V GS
10
8
6
10
20
4
2
1
0.1
1
10
100
0
0
10
V DS
20
30
I D = 40 A
40
6
I F - Diode Forward Current - A
Data Sheet D14093EJ7V0DS
Q G - Gate Charge - nC
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